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| 2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 1.6 (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 30 6 18 45 972 6 15 150 -55~150 Unit V V V A A W mJ A mJ C C 1: Gate 2: Drain 3: Source Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight: 1.7 (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C / W C / W 1 2 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 49.5 mH, RG = 25 , IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2006-11-13 2SK4014 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min -- 30 -- 900 2.0 -- -- -- -- -- Typ. -- -- -- -- -- 1.6 5.0 1400 30 130 25 Max 10 -- 100 -- 4.0 2.0 -- -- -- -- -- pF Unit A V A V V S ID = 3 A -- Turn-on time Switching time Fall time 50 tf RL = 133 -- 75 -- ns -- 60 -- VDD = 400 V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A -- -- -- -- 220 45 25 20 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V dIDR / dt = 100 A / s Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 1100 10 Max 6 18 -1.7 -- -- Unit A A V ns C Marking K4014 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 2SK4014 ID - VDS 5 Common source Tc = 25C Pulse test 10 8 5.25 6 10 10 8 ID - VDS 6 5.75 Common source Tc = 25C Pulse test DRAIN CURRENT ID (A) 3 5 DRAIN CURRENT ID (A) 4 8 6 5.5 2 4.75 4.5 4 5.25 5 1 VGS = 4 V 0 0 2 4 6 8 10 2 4.5 0 0 VGS = 4 V 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS 16 VDS - VGS 20 DRAIN-SOURCE VOLTAGE VDS (V) Common source VDS = 10 V Pulse test Common source Tc = 25C Pulse test DRAIN CURRENT ID (A) 16 12 12 ID = 6 A 8 3 4 1.5 0 8 25 4 100 Tc = -55C 0 0 2 4 6 8 10 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID 100 RDS (ON) - ID 10 Common source FORWARD TRANSFER ADMITTANCE Yfs (S) DRAIN-SOURCE ON-RESISTANCE RDS (ON) () Common source VDS = 10 V Pulse test 10 Tc = -55C 25 1 Tc = 25C Pulse test VGS = 10 V 1 100 0.1 0.1 1 10 0.1 0.1 1 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-13 2SK4014 RDS (ON) - Tc 5 100 Common source VGS = 10 V Pulse test ID = 6 A 3 Common source Tc = 25C Pulse test IDR - VDS DRAIN-SOURCE ON-RESISTANCE RDS (ON) () 4 DRAIN REVERSE CURRENT IDR (A) 10 3 2 1.5 1 1 10 5 0 3 -0.4 1 VGS = 0 V -0.8 -1.2 -1.6 0 -80 -40 0.1 0 40 80 120 160 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) C - VDS 10000 Vth - Tc 5 Vth (V) Ciss 4 Common source VDS = 10 V ID = 1 mA Pulse test (pF) 1000 GATE THRESHOLD VOLTAGE CAPACITANCE C 3 100 Coss 2 Crss 10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 100 1 1 0.1 0 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc 50 450 DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN-SOURCE VOLTAGE VDS (V) (V) 10 100 VDS = 400 V 5 0 100 VDS Common source ID = 6 A Tc = 25C Pulse test 200 300 15 PD (W) DRAIN POWER DISSIPATION 30 20 150 VGS 10 0 0 40 80 120 160 200 0 0 20 40 60 80 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-13 GATE-SOURCE VOLTAGE VGS 40 2SK4014 rth - tw 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE PDM t 0.01 0.01 T Duty = t/T Rth (ch-c) = 2.78C/W 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 1000 EAS - Tch AVALANCHE ENERGY EAS (mJ) ID max (PULSE) * DRAIN CURRENT ID (A) 10 100 s * ID max (CONTINUOUS) * 1 ms * 800 600 1 DC OPERATION Tc = 25C 400 0.1 200 0.01 1 VDSS max 10 100 1000 10000 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE VDS (V) CHANNEL TEMPERATURE (INITIAL) Tch (C) 15 V -15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 VDD = 90 V, L = 49.5 mH WAVEFORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-13 2SK4014 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13 |
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